Si-PIN X-Ray Detectors

The XR-100CR was a breakthrough in X-ray detector technology, providing “off-the-shelf” performance previously available only from expensive cryogenically cooled systems. Although newer detector technologies are now available, including Amptek’s XR-100SDD and the FastSDD®, the XR-100CR is still the workhorse of the XRF industry because of the combination of good performance and low cost.

The heart of Amptek’s XR-100CR is a thermoelectrically cooled Si-PIN photodiode which senses the X-rays. The two stage thermoelectric cooler keeps the detector and its input JFET at approximately -55 °C, reducing electronic noise without cryogenic liquid nitrogen. This cooling is key to the XR-100CR since it permits high performance in a compact, convenient package.

The hermetic TO-8 package of the detector has a light tight, vacuum tight, thin Be window to enable soft X-ray detection. There is vacuum inside the enclosure for optimum cooling. The XR-100CR detector includes an internal multilayer collimator to minimize background and spectral artifacts. It has a reset-style preamplifier, using a unique method of resetting through the high voltage connection to minimize noise.

In the XR-100CR the preamplifier is enclosed in a metal box, 3.0 x 1.75 x 1.125 inches, with the detector on an extender (available lengths: no extender, 1.5″, 5″, and 9”). The XR-100CR with a 5” or 9” extender is suitable for vacuum measurements, using the optional CP75 vacuum flange. Alternate preamplifiers are available, recommended for OEMs or where space is limited.

X-rays interact with silicon atoms to create an average of one electron/hole pair for every 3.62 eV of energy lost in the silicon. Depending on the energy of the incoming radiation, this loss is dominated by either the Photoelectric Effect or Compton scattering. The probability or efficiency of the detector to “stop” an x-ray and create electron/hole pairs increases with the thickness of the silicon. For more information, please refer to the Efficiency Curves on the “Performance” tab.

In order to facilitate the electron/hole collection process, a 100-200 volt bias voltage is applied across the silicon depending on the detector thickness. This voltage is too high for operation at room temperature, as it will cause excessive leakage, and eventually breakdown. Since the detector in the XR-100CR is cooled, the leakage current is reduced considerably, thus permitting the high bias voltage. This higher voltage decreases the capacitance of the detector, which lowers system noise.

The thermoelectric cooler cools both the silicon detector and the input FET transistor to the charge sensitive preamplifier. Cooling the FET reduces its leakage current and increases the transconductance, both of which reduce the electronic noise of the system.

Since optical reset is not practical when the detector is a photodiode, the XR-100CR incorporates a novel feedback method for the reset to the charge sensitive preamplifier. The reset transistor, which is typically used in most other systems has been eliminated. Instead, the reset is done through the high voltage connection to the detector by injecting a precise charge pulse through the detector capacitance to the input FET. This method eliminates the noise contribution of the reset transistor and further improves the energy resolution of the system.

A temperature monitor diode chip is mounted on the cooled substrate to provide a direct reading of the temperature of the internal components, which will vary with room temperature. Below -20 °C, the performance of the XR-100CR will not change with a temperature variation of a few degrees. Hence, closed loop temperature control is not necessary when using the XR-100CR at normal room temperature. For OEM applications or hand held XRF instrumentation a closed loop temperature control is recommended. The Active Temperature Control is standard in Amptek electronics such as the PX5 and DP5/PC5.

Figure 6 (log). Shows the probability of a photon undergoing any interaction, along with the probability of a photoelectric interaction which results in total energy deposition. As shown, the photoelectric effect is dominant at low energies but at higher energies above about 40 keV the photons undergo Compton scattering, depositing less than the full energy in the detector.

Both figures above combine the effects of transmission through the Beryllium window (including the protective coating), and interaction in the silicon detector. The low energy portion of the curves is dominated by the thickness of the Beryllium window, while the high energy portion is dominated by the thickness of the active depth of the Si detector. Depending on the window chosen, 90% of the incident photons reach the detector at energies  ranging from 2 to 3 keV. Depending on the detector chosen, 90% of the photons are detected at energies up to 9 to 12 keV.

Efficiency Package:A ZIP file of coefficients and a FAQ about efficiency. This package is provided for general information. It should not be used as a basis for critical quantitative analysis.

Theoretical Resolution as a Function of Energy

Example: Find the ⁵⁵Fe row in the above table and locate the resolution of the detector (bold). The column with that resolution lists the resolutions of that detector for these common energies.

XR-100CR Si-PIN Application Spectra

The most common applications of the XR-100CR are in the field of X-Ray fluorescence, or XRF. This is an analytical technique which determines the elements present in a sample, and does so non-destructively and very rapidly.

RoHS/WEEE Application

The RoHS / WEEE [Restriction of Hazardous Substances / Waste from Electrical and Electronic Equipment] directive requires that the electronics industry certify that products comply with maximum concentration amounts of particular elements and compounds (Cr VI, Pb, Cd, Hg, Br PBB/PBDE) by July, 2006. The chart below shows the X-ray spectrum emitted by a combination of chromium (Cr), lead (Pb), and cadmium (Cd). The XR-100CR can be used to verify compliance with the RoHS/WEEE requirements as part of a quality assurance program, via XRF. It permits users to measure the concentration of the specified elements, quickly, accurately, and non-destructively. Companies can verify supplier compliance and demonstrate their own compliance.

XRF of SS316

XRF can be used to determine exactly the alloy of a particular piece of metal. Each alloy has a unique ratio of elements, and with XRF, one can non-destructively determine the ratio of elements from the ratio of the intensities of the peaks. The spectrum below shows the spectrum of X-rays emitted from a piece of stainless steel 316, when excited by ¹⁰⁹Cd. The strong Fe line indicates that this is based on iron, while the Cr, Mn, Ni, and Mo peaks can be used to identify the alloy. This can be very important in numerous applications, such as quality assurance (verifying a vendor used the correct alloy), process control, metal recycling, etc.

XRF of lead (Pb)

A very important special case in the field of metals analysis is that of lead (Pb). Lead has been commonly used in many products for years, from paint to plumbing solders to electronic assemblies. XRF provides a non-destructive method to assess whether or not lead is present in an item, without damaging the item. The spectrum below shows the characteristic L X-rays emitted from a piece of pure lead, with a ¹⁰⁹Cd excitation source.

Plating on a Steel Connector

The spectrum below show the plating on electronic connectors. Since Cd cannot be used in certain connector applications, it can be important to verify its presence or absence. This spectrum clearly demonstrates that Cd and Cr were both used in the plating on the steel connector.

Gold (Au) Plated on Nickel (Ni)

XRF of a Saint Gaudens US $20 Gold Coin

XRF of a Platinum (Pt) Ring

XRF of a 14k Gold/White Gold (Au) Chain

XRF of Glass

XRF of Paper

Mössbauer Spectroscopy

The XR-100CR 7 mm²/300 µm detector is an excellent detector for Mössbauer Spectroscopy. Since the thickness of the detector is only 300 µm, it is very efficient at 14.4 keV and very inefficient at 122 keV. The ⁵⁷Co spectrum shown here shows a detection efficiency ratio between 14.4 keV and 122 keV of about 1700/1. By using a thin Aluminum absorber between the detector and the source, the 6.4 keV and 7.1 keV peaks can also be eliminated, leaving the 14.4 keV as the only detectable energy peak.

Multi-Element Fluorescence Sample

Low Z Element Fluorescence

241Am Spectrum

1.5 Inch Extender (standard)